发明名称
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing an infrared imaging element that resolves troubles such that imaging sensitivities vary depending on a light-receiving spot and can obtain stable images. SOLUTION: Thickness distribution of an imaging device chip 40 that is obtained by laminating an optical absorption layer 10 and a silicon layer 20 on a substrate 30 is measured. When a spot exceeding a desired thickness is found, the surface of the silicon layer 20 at the portion is polished and the thickness is reduced. Thereafter, a lens unit 51 having a number of lenses 50 is laminated on the surface of the silicon layer 20 and an imaging element 1 is obtained. The distance from the surface of the lens 50 to the optical absorption layer 10 becomes constant and a stable image can be obtained. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP5394762(B2) 申请公布日期 2014.01.22
申请号 JP20090021124 申请日期 2009.02.02
申请人 发明人
分类号 H01L27/144;G01J1/02;H01L27/14;H04N5/33 主分类号 H01L27/144
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