发明名称 Large surface area infrared sensitive photovoltaic device and a method for manufacturing the same
摘要 <p>A method for manufacturing a photovoltaic device (10) including the steps of providing a substrate, solution depositing a quantum nanomaterial layer (14) onto the substrate, the quantum nanomaterial layer (14) including a number of quantum nanomaterials (22) having a ligand coating (24), and applying a thin-film oxide layer (16) over the quantum nanomaterial layer (14). The disclosed invention refers to a photovoltaic device having a large surface area and which operates within a particular wavelength range, in particular the long wave infrared range.</p>
申请公布号 EP2688109(A2) 申请公布日期 2014.01.22
申请号 EP20130171705 申请日期 2013.06.12
申请人 THE BOEING COMPANY 发明人 EULISS, LARKEN E.;GRANGER, G. MICHAEL;DAVIS, KEITH J.;ABUEG, NICOLE L.;BREWER, PETER D.;NOSHO, BRETT
分类号 H01L31/0352;H01L31/032;H01L31/072;H01L31/18 主分类号 H01L31/0352
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