发明名称 Techniques for storing bits in memory cells having stuck-at faults
摘要 A data storage system includes a memory circuit comprising memory cells and a control circuit. The control circuit generates a first set of redundant bits indicating bit positions of the memory cells having stuck-at faults in response to a first write operation if a first rate of the stuck-at faults in the memory cells is greater than a first threshold. The control circuit is operable to encode data bits to generate encoded data bits and a second set of redundant bits that indicate a transformation performed on the data bits to generate the encoded data bits in response to a second write operation if a second rate of stuck-at faults in the memory cells is greater than a second threshold. The encoded data bits stored in the memory cells having the stuck-at faults match digital values of corresponding ones of the stuck-at faults.
申请公布号 GB201321469(D0) 申请公布日期 2014.01.22
申请号 GB20130021469 申请日期 2013.12.05
申请人 HGST NETHERLANDS B.V. 发明人
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