发明名称 |
Implementing enhanced data partial-erase for multi-level cell (MLC) memory using moving baseline memory data encoding |
摘要 |
A method and apparatus are provided for implementing enhanced data partial erase for multi-level cell (MLC) memory using threshold-voltage-drift or resistance-drift tolerant moving baseline memory data encoding. A data partial erase for data written to the MLC memory using threshold-voltage-drift or resistance-drift tolerant moving baseline memory data encoding is performed, and a data re-write after the partial erase to the MLC memory is performed using threshold-voltage-drift or resistance-drift tolerant moving baseline memory data encoding. A data partial erase cycle includes a duration and voltage level based upon a degradation of the MLC memory cells. |
申请公布号 |
GB2498874(B) |
申请公布日期 |
2014.01.22 |
申请号 |
GB20130001473 |
申请日期 |
2013.01.28 |
申请人 |
HGST NETHERLANDS B.V. |
发明人 |
ZVONIMIR Z BANDIC;LUIZ M FRANCA-NETO;CYRIL GUYOT;ROBERT EUGENIU MATEESCU |
分类号 |
G11C11/56;G06F12/02;G11C13/00;G11C16/04;G11C16/16;H03M5/14 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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