| 摘要 |
<p>The present invention relates to a thin film transistor substrate and a method of manufacturing the same capable of simplifying processes and reducing manufacturing costs. The thin film transistor substrate of the present invention comprises: a substrate; a gate line and a gate electrode formed on the substrate; a gate insulating layer formed on the entire surface of the substrate including the gate electrode; a thin film transistor formed at an intersection region between the gate line and a data line, and the data line intersecting with the gate line as leaving a space for the gate insulating layer between the data line and the gate line to define a pixel area; a pixel electrode formed on the gate insulating layer and directly connected to the thin film transistor, and a transparent conductive pattern covering the entire surface of the data line using the same material as the pixel electrode; a photosensitive organic pattern completely covering the transparent conductive pattern; a protective layer formed on the entire surface of the substrate including the photosensitive organic pattern; and a plurality of slit type common electrodes overlapping the pixel electrode as leaving a space for the protective layer between the pixel electrode and the common electrodes.</p> |
