| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a wafer placing table in which variations of thickness from a wafer placing surface to a flat-plate electrode are sufficiently slight though it includes a large diameter. <P>SOLUTION: In the method of manufacturing the wafer placing table, one surface of a dense first alumina sintered body 21 is polished so that its surface planarity may be 10μm or less and then an electrode paste 23 is printed on the polished surface. Then alumina powder whose mean particle diameter is 0.2μm or less is shaped into an alumina shaped body on the surface of the first alumina sintered body 21 on which the electrode paste 23 is printed and then is hot press sintered at a temperature of 1,250-1,350°C. In this manner, the alumina shaped body on the first alumina sintered body 21 is sintered into a dense second alumina sintered body as a support layer 12 and the electrode paste 23 is sintered into the flat-plate electrode 13. The surface of the first alumina sintered body 21 other than the second alumina sintered body is polished into the wafer placing surface. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
