发明名称
摘要 PROBLEM TO BE SOLVED: To provide high-purity trialkyl indium obtained by a simple method, and to provide the method. SOLUTION: In this high-purity trialkyl indium, the content of silicon atom is ≤0.3 mass ppm, the content of oxygen atom is ≤5.0 mass ppm, and the content of hydrocarbon compounds is ≤50 mass ppm. COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP5397641(B2) 申请公布日期 2014.01.22
申请号 JP20110285169 申请日期 2011.12.27
申请人 发明人
分类号 C07F5/00 主分类号 C07F5/00
代理机构 代理人
主权项
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