APPARATUS FOR DEPOSITION AND METHOD FOR FABRICATING OXIDE THIN FILM TRANSISTOR USING THE SAME

摘要

The present invention relates to deposition apparatus and a manufacturing method of an oxide thin film transistor using the same. The oxide thin film transistor using the deposition apparatus can reduce the manufacturing costs and simplify the manufacturing processes through an annealing process on an oxide semiconductor layer by using an electron beam equipped on the deposition apparatus without using additional annealing apparatus. The deposition apparatus comprises: a loader into which the substrate is inserted; an unloader which the substrate is discharged from; a first transfer chamber for transferring the substrate from the loader; a sputtering chamber for depositing the oxide semiconductor layer on the substrate inserted through the first transfer chamber; an electron beam device; and a second transfer chamber for transferring the substrate discharged from the sputtering chamber to the unloader with the electron beam while thermally treating the oxide semiconductor layer. [Reference numerals] (S10) Gate insulation film; (S15) Oxide semiconductor layer; (S20) Thermal treatment; (S25) Etching blocking layer; (S30) Source, drain electrode; (S35) Protective layer; (S40) Pixel electrode; (S5) Gate electrode