发明名称 Method for Manufacturing Niobium Oxide with Duplex Layers by Galvanostatic Anodization
摘要 PURPOSE: A manufacturing method of a niobium oxide with a two-layered structure is provided to easily manufacture a niobium oxide with a two-layered structure which is composed of a nano porous layer and a blocking layer by anode oxidation. CONSTITUTION: A manufacturing method of a niobium oxide with a two-layered structure comprises the following steps. Electrolyte which includes hydrofluoric acid (HF) and phosphoric acid (H3PO4) is manufactured. The niobium oxide with a two-layered structure is formed on the niobium thin film by implementing the anode oxidation for the niobium (Nb) thin film under the constant current of 0.25-10 mA/cm 2 in the electrolyte. The anode oxidation is performed for 30 minutes to 3 hours. The concentration of the phosphoric acid inside the electrolyte is 0.05-1.5 mole. The temperature of anode oxidation is -5-30°C.
申请公布号 KR101353190(B1) 申请公布日期 2014.01.22
申请号 KR20120033181 申请日期 2012.03.30
申请人 发明人
分类号 C25D11/02;C25D11/06 主分类号 C25D11/02
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