发明名称
摘要 <p>A flash memory device that includes a voltage generator circuit configured to generate a program voltage, a pass voltage, and a high voltage; a plurality of planes configured to perform a program operation in response to the program, pass, and high voltages and to verify the program operation, respectively; and control logic configured to control the planes in response to verification results from the planes, wherein the control logic controls the planes so as to interrupt the program and pass voltages or the high voltage from being applied to program-passed planes.</p>
申请公布号 JP5393999(B2) 申请公布日期 2014.01.22
申请号 JP20080112741 申请日期 2008.04.23
申请人 发明人
分类号 G11C16/02;G11C16/04;G11C16/06 主分类号 G11C16/02
代理机构 代理人
主权项
地址