| 发明名称 |
METHOD OF GROWING SILICON SINGLE CRYSTAL |
| 摘要 |
The invention relates to a method for growing a silicon single crystal. During the crystal growth, a thermal stress is applied to at least a portion of the silicon single crystal. A mixed gas of an inert gas and a gaseous substance containing hydrogen atoms is used as an atmospheric gas for growing the crystal. |
| 申请公布号 |
EP1897977(A4) |
申请公布日期 |
2014.01.22 |
| 申请号 |
EP20050811258 |
申请日期 |
2005.12.01 |
| 申请人 |
SUMCO CORPORATION |
发明人 |
INAMI, SHUICHI;TAKASE, NOBUMITSU;KOGURE, YASUHIRO;HAMADA, KEN;NAKAMURA, TSUYOSHI |
| 分类号 |
C30B29/06;C30B15/00;C30B15/04;C30B15/14 |
主分类号 |
C30B29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
