发明名称 |
SEMICONDUCTOR STRUCTURE HAVING AN INTEGRATED DOUBLE-WALL CAPACITOR FOR EMBEDDED DYNAMIC RANDOM ACCESS MEMORY (EDRAM) AND METHOD TO FORM THE SAME |
摘要 |
<p>Semiconductor structures having integrated double-wall capacitors for eDRAM and methods to form the same are described. For example, an embedded double-wall capacitor includes a trench disposed in a first dielectric layer disposed above a substrate. The trench has a bottom and sidewalls. A U-shaped metal plate is disposed at the bottom of the trench, spaced apart from the sidewalls. A second dielectric layer is disposed on and conformal with the sidewalls of the trench and the U-shaped metal plate. A top metal plate layer is disposed on and conformal with the second dielectric layer.</p> |
申请公布号 |
EP2686881(A1) |
申请公布日期 |
2014.01.22 |
申请号 |
EP20110860875 |
申请日期 |
2011.12.06 |
申请人 |
INTEL CORPORATION |
发明人 |
DOYLE, BRIAN S.;KUO, CHARLESC.;LINDERT, NICK;SHAH, UDAY;SURI, SATYARTH;CHAU, ROBERT S. |
分类号 |
H01L27/108;H01L49/02 |
主分类号 |
H01L27/108 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|