发明名称 |
Single-junction photovoltaic cell |
摘要 |
A method for forming a single-junction photovoltaic cell includes forming a dopant layer on a surface of a semiconductor substrate; diffusing the dopant layer into the semiconductor substrate to form a doped layer of the semiconductor substrate; forming a metal layer over the doped layer, wherein a tensile stress in the metal layer is configured to cause a fracture in the semiconductor substrate; removing a semiconductor layer from the semiconductor substrate at the fracture; and forming the single junction photovoltaic cell using the semiconductor layer. A single-junction photovoltaic cell includes a doped layer comprising a dopant diffused into a semiconductor substrate; a patterned conducting layer formed on the doped layer; a semiconductor layer comprising the semiconductor substrate located on the doped layer on a surface of the doped layer opposite the patterned conducting layer; and an ohmic contact layer formed on the semiconductor layer. |
申请公布号 |
US8633097(B2) |
申请公布日期 |
2014.01.21 |
申请号 |
US20100713572 |
申请日期 |
2010.02.26 |
申请人 |
BEDELL STEPHEN W.;SOSA CORTES NORMA E.;FOGEL KEITH E.;SADANA DEVENDRA;SHAHRJERDI DAVOOD;WACASER BRENT A.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BEDELL STEPHEN W.;SOSA CORTES NORMA E.;FOGEL KEITH E.;SADANA DEVENDRA;SHAHRJERDI DAVOOD;WACASER BRENT A. |
分类号 |
H01L21/22;H01L21/38;H01L21/385 |
主分类号 |
H01L21/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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