发明名称 METHOD FOR IMPLANTING A PIEZOELECTRIC MATERIAL
摘要 <p>A method of producing a structure made of a piezoelectric material, including: a) production of a stack including at least one metal layer and at least one conductive layer on a substrate made of piezoelectric material, wherein at least one electrical contact is established between the conductive layer and a metal element outside the stack; b) an ionic and/or atomic implantation, through the conductive layer and the metal layer; c) transfer of the substrate onto a transfer substrate, followed by fracturing of the transferred piezoelectric substrate, in an embrittlement area.</p>
申请公布号 KR20140008286(A) 申请公布日期 2014.01.21
申请号 KR20137002500 申请日期 2011.07.05
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES;SOITEC 发明人 DEGUET CHRYSTEL;BLANC NICOLAS;IMBERT BRUNO;MOULET JEAN SEBASTIEN
分类号 H01L41/22;H01L41/312 主分类号 H01L41/22
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