发明名称 |
Transistors with immersed contacts |
摘要 |
Embodiments of a semiconductor structure include a first current electrode region, a second current electrode region, and a channel region. The channel region is located between the first current electrode region and the second current electrode region, and the channel region is located in a fin structure of the semiconductor structure. A carrier transport in the channel region is generally in a horizontal direction between the first current electrode region and the second current electrode region. A contact extends into the first current electrode region and is electrically coupled to the first current electrode region. |
申请公布号 |
US8633515(B2) |
申请公布日期 |
2014.01.21 |
申请号 |
US201213613614 |
申请日期 |
2012.09.13 |
申请人 |
ORLOWSKI MARIUS K.;BURNETT JAMES D.;FREESCALE SEMICONDUCTOR, INC. |
发明人 |
ORLOWSKI MARIUS K.;BURNETT JAMES D. |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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