| 摘要 |
A semiconductor device according to the embodiment includes a growth substrate; a first buffer layer having a compositional formula of RexSiy (0@x@2, 0@y@2) over the growth substrate; and a group III nitride-based epitaxial semiconductor layer having a compositional formula of InxAlyGa1-x-yN (0@x, 0@y, x+y@1) over the first buffer layer. |
