SEMICONDUCTOR REACTION FURNACE CHAMBER AND IMPROVED PURGE PROCESS FOR DETERMINING CONDITION OF WAFER HOMED THEREIN,申请号JP19860116015-传众专利搜索

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发明名称	SEMICONDUCTOR REACTION FURNACE CHAMBER AND IMPROVED PURGE PROCESS FOR DETERMINING CONDITION OF WAFER HOMED THEREIN
摘要
申请公布号	JPS6230319(A)	申请公布日期	1987.02.09
申请号	JP19860116015	申请日期	1986.05.20
申请人	APPLIED MATERIALS INC	发明人	ROJIYAA II ROOGAA
分类号	H01L21/205;C30B23/06;C30B25/10;H01L21/31	主分类号	H01L21/205
代理机构		代理人
主权项
地址

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