发明名称 |
Methods of making multi-state non-volatile memory cells |
摘要 |
A semiconductor device includes a region in a semiconductor substrate having a top surface with a first charge storage layer on the top surface. A first conductive line is on the first charge storage layer. A second charge storage layer is on the top surface. A second conductive line is on the second charge storage layer. A third charge storage layer is on the top surface. A third conductive line is on the third charge storage layer. A fourth charge storage layer has a first side adjoining a first sidewall of the first conductive line and a second side adjoining a first sidewall of the second conductive line. A fifth charge storage layer has a first side adjoining a second sidewall of the second conductive line and a second side adjoining a first sidewall of the third conductive line. Source and drain regions are formed in the substrate on either side of the semiconductor device. |
申请公布号 |
US8633080(B2) |
申请公布日期 |
2014.01.21 |
申请号 |
US201113004985 |
申请日期 |
2011.01.12 |
申请人 |
HALL MARK D.;SHROFF MEHUL D.;FREESCALE SEMICONDUCTOR, INC. |
发明人 |
HALL MARK D.;SHROFF MEHUL D. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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