发明名称 |
Method for electron beam induced etching of layers contaminated with gallium |
摘要 |
The invention relates to a method for electron beam induced etching of a layer contaminated with gallium, with the method steps of providing at least one first halogenated compound as an etching gas at the position at which an electron beam impacts on the layer, and providing at least one second halogenated compound as a precursor gas for removing of the gallium from this position. |
申请公布号 |
US8632687(B2) |
申请公布日期 |
2014.01.21 |
申请号 |
US200913058635 |
申请日期 |
2009.08.11 |
申请人 |
AUTH NICOLE;SPIES PETRA;BECKER RAINER;HOFMANN THORSTEN;EDINGER KLAUS;CARL ZEISS SMS GMBH |
发明人 |
AUTH NICOLE;SPIES PETRA;BECKER RAINER;HOFMANN THORSTEN;EDINGER KLAUS |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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