BOTTOM ELECTRODE USING BY VERTICAL SILCON NANOWIRES AND FABRICATION METHOD OF THE SAME

摘要

The present invention discloses a bottom electrode using vertical silicon nanowires and a method for fabricating the same. A catalyst etching process is simplified by using a property where a catalyst metal used for a catalyst etching method remains under the nanowires, without a separate post lower electrode process. The contact resistance of silicon and silicide are greatly improved by using a silicide formation metal thin film. The method includes a step for forming a lamination pattern structure where the silicide formation metal thin film and a catalyst metal thin film of a mesh shape are layered on the upper part of the silicon substrate; a step for manufacturing the vertical silicon nanowires in the silicon substrate by a metal catalyst etching process; and a step for forming a silicide by silicon reaction by performing a thermal process on the silicide formation metal thin film.