发明名称 |
Method of forming an I-II-VI2 compound semiconductor thin film of chalcopyrite structure |
摘要 |
A method of forming an compound semiconductor thin film of chalcopyrite structure includes the steps of heating up elemental VI powder in a first chamber to produce VI vapor flux. The VI vapor flow is introduced into a second chamber and an Argon plasma is utilized to crack large molecular VI fractions to generate small VI species. The small molecule VI species are homogeneously deposited on the metallic I-III precursor layers and the precursor film is sealed into a graphite box and transferred to an annealing chamber to create an absorber layer with a large grain size and good crystalline structure. |
申请公布号 |
US8632851(B1) |
申请公布日期 |
2014.01.21 |
申请号 |
US201313871640 |
申请日期 |
2013.04.26 |
申请人 |
SUN HARMONICS LTD |
发明人 |
REN YUHANG;HUANG ZHI;LUO PAIFENG;SHUM KAI |
分类号 |
B05D5/12;H01L21/06;H05H1/24 |
主分类号 |
B05D5/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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