发明名称 Methods and apparatus for increasing memory density using diode layer sharing
摘要 A memory is described that includes a shared diode layer and a memory element coupled to the diode layer. The memory element has a pie slice-shape, and includes a sidewall having a carbon film thereon. Numerous other aspects are also disclosed.
申请公布号 US8633528(B2) 申请公布日期 2014.01.21
申请号 US201213674513 申请日期 2012.11.12
申请人 SANDISK 3D LLC 发明人 XU HUIWEN;PING ER-XUAN;SCHEUERLEIN ROY E.
分类号 H01L29/76 主分类号 H01L29/76
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