| 摘要 |
A semiconductor device includes a semiconductor substrate including an element region, an inner sealing and an outer sealing which are formed on the element region and have a first opening part and a second opening part, respectively, a multilayer interconnection structure which is formed on the substrate and stacks multiple inter-layer insulation films each including a wiring layer, a moisture resistant film formed between a first inter-layer insulation film and a second inter-layer insulation film which are included in the multilayer interconnection structure, a first portion which extended from a first side of the moisture resistant film and passes the first opening part, a second portion which extended from a second side of the moisture resistant film and passes through the second opening part, and a wiring pattern including a via plug which penetrates the moisture resistant film and connects the first portion and the second portion. |
