发明名称 |
MANUFACTURING METHOD OF NANOWIRE AND DIODE COMPRISING NANOWIRE MUNUFACTURED USING THE SAME |
摘要 |
The present invention provides a manufacturing method of a nanowire which can uniformly and economically manufacture a nanowire in a desired size and a high-crystalline structure in short time, and a diode comprising the nanowire manufactured using the same. By applying the high-crystalline nanowire manufactured using the manufacturing method to an optical device, a photoelectric device, a transistor, a memory device, or other devices in various fields, the quality and the efficiency of the devices can be improved. |
申请公布号 |
KR101352958(B1) |
申请公布日期 |
2014.01.21 |
申请号 |
KR20120133117 |
申请日期 |
2012.11.22 |
申请人 |
INDUSTRIAL COOPERATION FOUNDATION CHONBUK NATIONAL UNIVERSITY |
发明人 |
LEE, CHEUL RO;RA, YONG HO |
分类号 |
B82B3/00;B82B1/00;H01L33/50 |
主分类号 |
B82B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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