发明名称 MANUFACTURING METHOD OF NANOWIRE AND DIODE COMPRISING NANOWIRE MUNUFACTURED USING THE SAME
摘要 The present invention provides a manufacturing method of a nanowire which can uniformly and economically manufacture a nanowire in a desired size and a high-crystalline structure in short time, and a diode comprising the nanowire manufactured using the same. By applying the high-crystalline nanowire manufactured using the manufacturing method to an optical device, a photoelectric device, a transistor, a memory device, or other devices in various fields, the quality and the efficiency of the devices can be improved.
申请公布号 KR101352958(B1) 申请公布日期 2014.01.21
申请号 KR20120133117 申请日期 2012.11.22
申请人 INDUSTRIAL COOPERATION FOUNDATION CHONBUK NATIONAL UNIVERSITY 发明人 LEE, CHEUL RO;RA, YONG HO
分类号 B82B3/00;B82B1/00;H01L33/50 主分类号 B82B3/00
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