发明名称 Methods for atomic layer etching
摘要 Provided are methods of etching a substrate using atomic layer deposition apparatus. Atomic layer deposition apparatus including a gas distribution plate with a thermal element are discussed. The thermal element is capable of locally changing the temperature of a portion of the surface of the substrate to vaporize an etch layer deposited on the substrate.
申请公布号 US8633115(B2) 申请公布日期 2014.01.21
申请号 US201113307524 申请日期 2011.11.30
申请人 CHANG MEI;YUDOVSKY JOSEPH;APPLIED MATERIALS, INC. 发明人 CHANG MEI;YUDOVSKY JOSEPH
分类号 H01L21/302;H01L21/461 主分类号 H01L21/302
代理机构 代理人
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