发明名称 |
Methods for atomic layer etching |
摘要 |
Provided are methods of etching a substrate using atomic layer deposition apparatus. Atomic layer deposition apparatus including a gas distribution plate with a thermal element are discussed. The thermal element is capable of locally changing the temperature of a portion of the surface of the substrate to vaporize an etch layer deposited on the substrate. |
申请公布号 |
US8633115(B2) |
申请公布日期 |
2014.01.21 |
申请号 |
US201113307524 |
申请日期 |
2011.11.30 |
申请人 |
CHANG MEI;YUDOVSKY JOSEPH;APPLIED MATERIALS, INC. |
发明人 |
CHANG MEI;YUDOVSKY JOSEPH |
分类号 |
H01L21/302;H01L21/461 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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