| 发明名称 |
Self-bootstrapping field effect diode structures and methods |
| 摘要 |
A two terminal device which can be used for the rectification of the current. Internally it has a regenerative coupling between MOS gates of opposite type and probe regions. This regenerative coupling allows to achieve performance better than that of ideal diode. |
| 申请公布号 |
US8633521(B2) |
申请公布日期 |
2014.01.21 |
| 申请号 |
US20100683425 |
申请日期 |
2010.01.06 |
| 申请人 |
ANKOUDINOV ALEXEI;RODOV VLADIMIR;STMICROELECTRONICS N.V. |
发明人 |
ANKOUDINOV ALEXEI;RODOV VLADIMIR |
| 分类号 |
H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/76 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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