REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY AND PROCESS FOR ITS PRODUCTION, AS WELL AS SUBSTRATE WITH REFLECTIVE LAYER FOR SUCH MASK BLANK AND PROCESS FOR ITS PRODUCTION

摘要

Provided are a mask blank for EUVL including excellent surface uniformity of central wavelength of reflected light in the EUV wavelength band and excellent surface uniformity of a peak reflection rate of light in the EUV wavelength band; a manufacturing method thereof; a reflective layer attachment substrate for EUVL used for manufacturing the mask blank for the EUVL; and a manufacturing method thereof. The present invention is a method for manufacturing the reflective layer attachment substrate for EUV lithography forming a reflective layer reflecting EUV light on the substrate. The reflective layer is a multi-layered reflective film formed as a low reflective index layer and a high reflective index layer are laminated by turns in multiple times with a sputtering method. At least one layer among the layers forming the multi-layered reflective layer is a reflection rate distribution correction layer forming the distribution of layer thickness in a radial direction on the center of the substrate according to the surface distribution of the peak reflection rate of light in the EUV wavelength band in the radial direction of the center of the substrate. Therefore, the manufacturing method of the reflective layer attachment substrate for the EUVL suppresses the surface distribution of the peak reflection rate of the EUV light in the radial direction on the center of the substrate.