METHOD FOR SEPARATING NITRIDE-BASED SEMICONDUCTOR LAYER FROM GROWTH SUBSTRATE

摘要

The present invention relates to a method for separating nitride semiconductor layers and growth substrates. According to the present invention, provided is the separating method comprising the steps of: preparing substrates; growing sacrificial layers on the substrates; forming a plurality of grooves on the sacrificial layers while the nitride semiconductor layers are growing but growing the nitride semiconductor layers on the sacrificial layer; and separating the substrates and the nitride semiconductor layers.