发明名称 Method of processing cavity of core substrate
摘要 A method of processing a cavity of a core substrate is disclosed. The method of processing a cavity of a core substrate in accordance with an embodiment of the present invention can include: forming a first processing area on one surface of a core substrate, the first processing area being demarcated by a circuit pattern; forming a second processing area on the other surface of the core substrate, the second processing area being demarcated by a circuit pattern; and processing a cavity by removing the entire first processing area from the one surface of the core substrate.
申请公布号 US8633397(B2) 申请公布日期 2014.01.21
申请号 US20100860301 申请日期 2010.08.20
申请人 JEONG JIN-SOO;LEE DOO-HWAN;PARK HWA-SUN;LEE JAE-KUL;CHUNG YUL-KYO;SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 JEONG JIN-SOO;LEE DOO-HWAN;PARK HWA-SUN;LEE JAE-KUL;CHUNG YUL-KYO
分类号 H05K1/16 主分类号 H05K1/16
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