| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that reduces surface defects and improves manufacturing yield.SOLUTION: A method of manufacturing a semiconductor device includes: a step of forming a wiring groove in an insulating film; a step of forming a barrier metal layer covering a top surface of the insulating film and an inner surface of the wiring groove, and a metal layer filling the inside of the wiring groove and covering the barrier metal layer; a first polishing step of polishing the metal layer with a first load being applied; and a second polishing step of polishing the metal layer with a second load heavier than the first load being applied while spraying a gas to a polishing pad. |
