| 摘要 |
PROBLEM TO BE SOLVED: To provide a deep ultraviolet laser light source which uses a wideband gap semiconductor layer by electron beam excitation.SOLUTION: A deep ultraviolet laser light source includes: a sapphire (0001) substrate 1; an AIN buffer layer 2 formed on the sapphire (0001) substrate; a grating AIN layer 3 formed on the AIN buffer layer 2; an AIN layer 4 formed on the grating AIN layer 3; an AlGaN/AlN multiquantum well layer 5 which includes 1 to 10 repeated cycles of an AlGaN well layer that is formed on the AIN layer 4 and has a thickness of approximately 3 nm, and an AIN barrier layer with a thickness of approximately 3 nm, with the AlGaN well layer and the AIN barrier layer as one cycle, and has a thickness of approximately 6 to 60 nm; an aluminum (Al) metal back layer 6 formed on the AlGaN/AlN multiquantum well layer 5; and an election emission surface 7 which emits an electron beam EB. Both side faces are cut or cleaved, and two reflection structures RS1 with a reflectance R of 30% are formed thereon. |
