发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor memory device having low current consumption.SOLUTION: A semiconductor memory device according to an embodiment includes: a first current control transistor whose one terminal is connected to a first power supply potential; a bit line that is connected to the other terminal of the first current control transistor; a source line that is connected to a second power supply potential; and a plurality of word lines. When data is read from a memory cell transistor that is connected between the bit line and source line and that uses the word lines as a control gate electrode, a potential to be applied to a control electrode of the first current control transistor increases with time.
申请公布号 JP2014010875(A) 申请公布日期 2014.01.20
申请号 JP20120148618 申请日期 2012.07.02
申请人 TOSHIBA CORP 发明人 ABE KATSUMI;YOSHIHARA MASAHIRO
分类号 G11C16/06;G11C16/02;G11C16/04 主分类号 G11C16/06
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