发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device having low current consumption.SOLUTION: A semiconductor memory device according to an embodiment includes: a first current control transistor whose one terminal is connected to a first power supply potential; a bit line that is connected to the other terminal of the first current control transistor; a source line that is connected to a second power supply potential; and a plurality of word lines. When data is read from a memory cell transistor that is connected between the bit line and source line and that uses the word lines as a control gate electrode, a potential to be applied to a control electrode of the first current control transistor increases with time. |
申请公布号 |
JP2014010875(A) |
申请公布日期 |
2014.01.20 |
申请号 |
JP20120148618 |
申请日期 |
2012.07.02 |
申请人 |
TOSHIBA CORP |
发明人 |
ABE KATSUMI;YOSHIHARA MASAHIRO |
分类号 |
G11C16/06;G11C16/02;G11C16/04 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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