发明名称 SEMICONDUCTOR DEVICE AND ELECTRIC POWER CONVERSION APPARATUS USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device capable of inhibiting characteristic fluctuations, such as threshold fluctuations and the deterioration of the short circuit capacity, which are caused by variations of the manufacturing processes.SOLUTION: A semiconductor device includes: a semiconductor substrate having a pair of main surfaces; a first conductive type first semiconductor layer formed in the semiconductor substrate; a pair of trench gates which is formed in the first semiconductor layer; a protruding shape semiconductor layer which is formed between the pair of trench gates; a first conductive type second semiconductor layer which is formed at a step part of the protruding shape semiconductor layer; and a second conductive type third semiconductor layer which is formed in a protruding part of the protruding shape semiconductor layer.
申请公布号 JP2014011369(A) 申请公布日期 2014.01.20
申请号 JP20120148104 申请日期 2012.07.02
申请人 HITACHI LTD 发明人 TOYODA YOSHIAKI;WAKAGI MASATOSHI
分类号 H01L29/739;H01L21/336;H01L29/78 主分类号 H01L29/739
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