发明名称 |
SEMICONDUCTOR DEVICE AND ELECTRIC POWER CONVERSION APPARATUS USING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of inhibiting characteristic fluctuations, such as threshold fluctuations and the deterioration of the short circuit capacity, which are caused by variations of the manufacturing processes.SOLUTION: A semiconductor device includes: a semiconductor substrate having a pair of main surfaces; a first conductive type first semiconductor layer formed in the semiconductor substrate; a pair of trench gates which is formed in the first semiconductor layer; a protruding shape semiconductor layer which is formed between the pair of trench gates; a first conductive type second semiconductor layer which is formed at a step part of the protruding shape semiconductor layer; and a second conductive type third semiconductor layer which is formed in a protruding part of the protruding shape semiconductor layer. |
申请公布号 |
JP2014011369(A) |
申请公布日期 |
2014.01.20 |
申请号 |
JP20120148104 |
申请日期 |
2012.07.02 |
申请人 |
HITACHI LTD |
发明人 |
TOYODA YOSHIAKI;WAKAGI MASATOSHI |
分类号 |
H01L29/739;H01L21/336;H01L29/78 |
主分类号 |
H01L29/739 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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