| 摘要 |
PROBLEM TO BE SOLVED: To provide an LDMOS device which improves a breakdown voltage, gain, a leakage current, and power processing capability, etc.SOLUTION: A multi-region (81, 83) LDMOS device (40) has an SOI support structure (21) in which a first LDMOS region (81) being symmetrical, lateral and inside and a second LDMOS region (83) being asymmetrical and laterally adjacent to an end are formed. A doped SC buried layer region (86) is provided in the SOI support structure adjacent to a DTI wall (60), is below a part of the second LDMOS region (83) laterally adjacent to the end, and has an opposite conductivity type from a drain region (31) of the second LDMOS region laterally adjacent to the end. By providing the doped SC buried layer region, increase in an electric field exhibited by the second LDMOS region (83) related to the DTI wall (60) and laterally adjacent to the end and a lower source-drain breakdown voltage are avoided. |
