| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a silicon oxide film which improves etching resistance and does not adversely affect device performance, and a formation device thereof.SOLUTION: A method for forming a silicon oxide film comprises a deposition step and a modification step. The deposition step supplies a silicon source containing chlorine into a reaction chamber housing a plurality of workpieces to deposit a silicon oxide film in the plurality of workpieces. The modification step supplies hydrogen and oxygen or hydrogen and nitrous oxide into the reaction chamber to place the reaction chamber under a hydrogen and oxygen atmosphere or a hydrogen and nitrous oxide atmosphere, and modifies the silicon oxide film deposited by the deposition step. |
