FILM FORMING METHOD, FILM FORMING DEVICE AND STORAGE MEDIUM

摘要

PROBLEM TO BE SOLVED: To provide a film forming method for controlling stress generated in a thin film with a layer of aluminium nitride or silicon nitride.SOLUTION: A film forming method forms a thin film by laminating molecular layers of a reaction product consisting of aluminium nitride or silicon nitride on a substrate w mounted on a turntable 2 while revolving the substrate w in a vacuum container 12. First processing gas being raw material gas for producing the reaction product is supplied to the substrate 2 while revolving the substrate w by rotating the turntable 2. Then, second processing gas being gas for nitriding the first processing gas is supplied at positions arranged spaced apart in a circumferential direction of the turntable 2 relative to a position where the first processing gas is supplied to the substrate w. After that, the molecular layers of the reaction product formed on the substrate w is irradiated with ultraviolet rays to control stress generated in the thin film.