| 摘要 |
PROBLEM TO BE SOLVED: To provide a blank mask and a method for fabricating a photomask using the blank mask.SOLUTION: The blank mask comprises: a light-shielding film including a light-shielding layer and an antireflection layer; and a hard mask film. The light-shielding layer and the antireflection layer are constituted by combining a layer formed of a MoSi compound and a layer formed of a MoTaSi compound. In the blank mask, the light-shielding film can be formed as thin as 200 Å to 700 Å, which can achieve resolution of a pattern in a class of 32 nm or smaller, and thereby, a photomask having a pattern fidelity corresponding to the resolution can be formed. The light-shielding layer has an optical density of 2.0 to 4.0 at an exposure wavelength of 193 nm, and has excellent superior characteristics in chemical resistance and a process margin for defect repair. Further, the hard mask film is formed to a thickness of 20 Å to 50 Å by using a compound containing tin (Sn) and chromium (Cr), and thereby, an etching rate of the hard mask film can be decreased. Thus, a resist film can be formed thin, which achieves high resolution. |
