| 摘要 |
PROBLEM TO BE SOLVED: To integrally and effectively form and embed a TSV and a back bump electrode in a semiconductor substrate in the same process.SOLUTION: A rear face protection film 5 of a material such as silicon nitride is formed on a rear face 1r of a semiconductor substrate 1. A back bump electrode/TSV 87 in which a TSV and a back bump electrode are integrally formed by a dielectric substance such as copper is arranged such that a part of a TSV part and a part of the bump electrode are embedded with respect to the substrate 1 via a seed layer. In other words, a hole in which the back bump electrode/TSV 87 is embedded includes a TSV through hole corresponding to the TSV and a cylindrical stepped part (substrate recess) leading to the TSV through hole, which corresponds to the part of the bump electrode. A side wall of such hole at the TSV through hole part is covered with an insulation film and a TSV side wall insulation ring 61 is formed. Further, a solder 81 is formed by plating on a surface of the bump electrode part of the back bump electrode/TSV 87. |
