| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device with a high short-channel suppression effect.SOLUTION: A method for manufacturing a semiconductor device includes the steps of: forming a gate insulating film on a semiconductor substrate, a gate electrode on the gate insulating film, and a mask on the gate electrode; implanting a first impurity into the semiconductor substrate; thinning the mask: and implanting a second impurity into the semiconductor substrate after the thinning step. |
