| 摘要 |
The present invention is to provide a polishing method for saving the time required for a repolishing process and applying a controlled polishing condition to a post wafer polishing process. According to the present invention, the polishing method includes performing a polishing process on a wafer in a polishing part, transferring the wafer to a wet type layer thickness detector before the polished is cleaned and dried, measuring the present thickness of a layer by using the wet type layer thickness detector, comparing the present thickness with a predetermined target value, and performing a repolishing process on the wafer in the polishing part before the polished is cleaned and dried if the present thickness do not reach the predetermined target value. [Reference numerals] (AA) Polish a wafer; (BB) Re-polish the wafer; (CC) Thickness of a layer reaches a target value?; (DD) No; (EE) Yes; (FF) Clean the polished wafer; (GG) Dry the cleaned wafer; (HH) Measure the thickness of the layer; (II) End |
