| 发明名称 |
METHOD OF MAKING LIGHT-EMITTING DIODE |
| 摘要 |
FIELD: physics.SUBSTANCE: antireflection optical coating of SiOis deposited on a light-emitting GaN-n or GaN-p surface and a microrelief is formed in said coating in form of nano-spikes with density of 10-10items/cm. The present method enables to form a microrelief light-diffusing, light-emitting surface on both an n-type and p-type GaN without deterioration of heterostructure parameters.EFFECT: high external quantum efficiency of GaN-based light-emitting diodes.2 dwg, 1 ex |
| 申请公布号 |
RU2504867(C2) |
申请公布日期 |
2014.01.20 |
| 申请号 |
RU20120100323 |
申请日期 |
2012.01.10 |
| 申请人 |
FEDERAL'NOE GOSUDARSTVENNOE BJUDZHETNOE OBRAZOVATEL'NOE UCHREZHDENIE VYSSHEGO PROFESSIONAL'NOGO OBRAZOVANIJA TOMSKIJ GOSUDARSTVENNYJ UNIVERSITET SISTEM UPRAVLENIJA I RADIOEHLEKTRONIKI |
发明人 |
DANILINA TAMARA IVANOVNA;TROJAN PAVEL EFIMOVICH;CHISTOEDOVA INNA ANATOL'EVNA |
| 分类号 |
H01L33/40;B82B3/00;B82Y40/00 |
主分类号 |
H01L33/40 |
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