| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for reducing the surface roughness of polycrystalline silicon and a processing apparatus therefor.SOLUTION: A plasma processing method includes: (a) a step for growing a polycrystalline silicon layer on a target substrate; and (b) a step for supplying processing gas containing hydrogen-containing gas into a processing container housing the target substrate on which the polycrystalline silicon layer has grown and then emitting microwaves inside the processing container so as to generate hydrogen radicals, thereby exposing the polycrystalline silicon layer to the hydrogen radicals. |
