发明名称 PLASMA TREATMENT APPARATUS AND PLASMA TREATMENT METHOD
摘要 PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus in which productivity is improved by suppressing generation of minute foreign substances or wearing of a sampling stage surface.SOLUTION: The plasma treatment apparatus comprises: a treatment chamber which is disposed within a vacuum container and in which plasma is formed at an inner side where pressure is reduced; a sampling stage which is disposed in a lower portion within the treatment chamber and with which a sample to be treated by using the plasma is placed on the top face thereof; a dielectric film made of a dielectric body constituting a placement surface on which the sample in an upper portion of the sampling stage is placed thereon; and a plurality of electrodes which are disposed within the dielectric film and to which electric power is supplied for adsorbing and holding the sample onto the dielectric film. While placing the sample on the sampling stage, electric power is supplied to at least one of the plurality of electrodes to adsorb a portion of the sample, a temperature of the sample is elevated by heating to a predetermined temperature, thereafter, electric power is supplied to the other electrode in the plurality of electrodes to adsorb the sample over a wide range, and treatment of the sample is then initiated using the plasma.
申请公布号 JP2014011215(A) 申请公布日期 2014.01.20
申请号 JP20120144904 申请日期 2012.06.28
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 SATO KOHEI;NAKAMOTO KAZUNORI;OMOTO YUTAKA
分类号 H01L21/3065;H01L21/683;H05H1/46 主分类号 H01L21/3065
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