发明名称 SENSE AMPLIFIER CIRCUIT OF RESISTIVE MEMORY
摘要 PROBLEM TO BE SOLVED: To provide a sense amplifier circuit of a resistive memory that has a current reuse function, high noise resistance characteristics, and a readout and/or reuse operation mode.SOLUTION: A sense amplifier of a resistive memory includes: differential output terminals; first and second input terminals; and a precharge section. The sense amplifier can reduce overall current consumption in a circuit and improve noise resistance by reusing current during stages of "setting" or "amplification" thereof. A voltage level at a high-impedance output terminal varies in response to a delta average current between a reference line current and a bit line current. In an operation in a "progress" or "latch" stage, a logical value "0" or "1" is latched by the differential output terminals through positive feedback of a latch circuit. Further, a current mirror circuit can be used while coupled to the sense amplifier circuit, which can assist in readout/rewrite operation.
申请公布号 JP2014010885(A) 申请公布日期 2014.01.20
申请号 JP20130136299 申请日期 2013.06.28
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 YONGSIK YOUN;CHA SOOHO;CHAN-KYUNG KIM
分类号 G11C11/15;G11C13/00 主分类号 G11C11/15
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