SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device of a lateral structure that allows improving the reliability even if a high electric field occurs between electrodes.SOLUTION: A semiconductor device 1 includes a substrate 11 composed of Si, a buffer layer 12 formed on the substrate, a GaN layer 13 stacked on the buffer layer 12, an AlGaN layer 14 stacked on the GaN layer 13 and containing another GaN compound that is hetero-joined with GaN, and a Schottky electrode 3 and an ohmic electrode 4 formed with a predetermined distance on a front surface 14a of the AlGaN layer 14. The semiconductor device 1 further includes a dielectric structure 5 that integrally covers facing surfaces 3a and 4a of the electrodes 3 and 4 and the front surface 14a of the AlGaN layer 14 and is composed of SiO, and a dielectric structure 6 that is provided on the dielectric structure 5 and between the electrode 3 and 4 and is composed of a material having the same dielectric constant as SiOor a dielectric constant greater than or equal to that of SiO.