| 摘要 |
PROBLEM TO BE SOLVED: To provide a polymeric compound, a resin composition for a photoresist, and a method for manufacturing a semiconductor, exhibiting excellent sensitivity, resolution, and etching durability, small line edge roughness and high accuracy of a fine pattern, and capable of reducing generation of development defects.SOLUTION: The polymeric compound includes a monomer unit (a) expressed by formula (a) below, at least one unit (b) selected from four units including a specified structure, and at least one monomer unit (c) including an alicyclic skeleton having a polar group excluding the unit (b). |
