发明名称 |
THROUGH ELECTRODE SUBSTRATE |
摘要 |
PROBLEM TO BE SOLVED: To provide a through electrode substrate capable of reducing stress that may cause destruction occurring during silicon wafer lamination, and to provide a manufacturing method of the through electrode substrate which prevents the increase of device costs even when the silicon wafer size is increased.SOLUTION: A through electrode substrate 65 is used for connecting a silicon substrate 63A with a silicon substrate 63B through a through electrode 61 after the silicon substrates 63A and 63B are laminated in a thickness direction. A resin is used for a base material 60 of the through electrode substrate. |
申请公布号 |
JP2014011446(A) |
申请公布日期 |
2014.01.20 |
申请号 |
JP20120159023 |
申请日期 |
2012.06.29 |
申请人 |
LEAP CO LTD |
发明人 |
MASUDA HOMARE;SANO TAKASHI;NAKAMURA KOSUKE |
分类号 |
H01L23/32;H01L25/065;H01L25/07;H01L25/18 |
主分类号 |
H01L23/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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