发明名称 THROUGH ELECTRODE SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a through electrode substrate capable of reducing stress that may cause destruction occurring during silicon wafer lamination, and to provide a manufacturing method of the through electrode substrate which prevents the increase of device costs even when the silicon wafer size is increased.SOLUTION: A through electrode substrate 65 is used for connecting a silicon substrate 63A with a silicon substrate 63B through a through electrode 61 after the silicon substrates 63A and 63B are laminated in a thickness direction. A resin is used for a base material 60 of the through electrode substrate.
申请公布号 JP2014011446(A) 申请公布日期 2014.01.20
申请号 JP20120159023 申请日期 2012.06.29
申请人 LEAP CO LTD 发明人 MASUDA HOMARE;SANO TAKASHI;NAKAMURA KOSUKE
分类号 H01L23/32;H01L25/065;H01L25/07;H01L25/18 主分类号 H01L23/32
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