发明名称 SUBSTRATE PLACEMENT MEMBER FOR ION IMPLANTATION AND ION IMPLANTATION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a substrate placement member for ion implantation and an ion implantation method that can prevent ions from being implanted in a side face of a substrate.SOLUTION: An substrate placement member 3 for ion implantation is configured to implant ions in an upper surface 4a (upstream-side surface) of a substrate 4 by arranging the substrate 4 in a recessed part 20 which is open on an upstream side in a direction of ion implantation. Further, the recessed part 20 which covers a side face 4c of the substrate 4 with a peripheral wall part 22 is in substantially the same shape with the substrate when viewed from the direction of ion implantation. Namely, the side face 4c of the substrate 4 is covered with the peripheral wall part 22 over the entire periphery. Consequently, ions are prevented from being implanted in the side face 4c of the substrate 4.
申请公布号 JP2014011394(A) 申请公布日期 2014.01.20
申请号 JP20120148690 申请日期 2012.07.02
申请人 SUMITOMO HEAVY IND LTD 发明人 MITSUMINE YUKI;MURAKAMI YOSHINOBU
分类号 H01L21/265;H01L21/683 主分类号 H01L21/265
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