| 摘要 |
PROBLEM TO BE SOLVED: To provide a sputtering apparatus capable of forming a film efficiently by suppressing a rise in temperature of a substrate.SOLUTION: The sputtering apparatus 1 comprises: a vacuum chamber 2; a partition part 5 partitioning an interior space of the vacuum chamber into a plurality of regions; and a carousel (holder part) 3 on which a substrate (object to be formed with film) 4 is placed, the carousel being configured to be rotatable so that the placed substrate 4 passes through at least any of the plurality of regions. The plurality of regions include a first region (cooling region) 6 and a second region (film forming region) 7. The first region 6 is a region to which a process gas is introduced to cool the substrate 4 and the second region 7 is a region in which a target 9 is placed and the substrate 4 is subjected to film formation. |
