发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR FILM |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor film capable of manufacturing a ZnMgO film in which an additive amount of Mg to Zn is more than 20 mol% using a liquid phase film formation method.SOLUTION: A method for manufacturing a semiconductor film comprises: a first step of preparing a mixture containing zinc hydroxide and magnesium hydroxide; a second step of attaching the mixture to a film-formed member; and a third step of heating the film-formed member attached with the mixture from 300°C to 400°C in 100/30 minutes. |
申请公布号 |
JP2014011310(A) |
申请公布日期 |
2014.01.20 |
申请号 |
JP20120147030 |
申请日期 |
2012.06.29 |
申请人 |
TOYOTA MOTOR CORP |
发明人 |
MAEKAWA RYOSUKE;AWANO HIROMOTO;MATSUNAGA TOMOYA;TAKEDA YUICHIRO;SAKAI TAKENOBU;KUSANO YUYA |
分类号 |
H01L21/368;H01L31/06 |
主分类号 |
H01L21/368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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