发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR FILM
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor film capable of manufacturing a ZnMgO film in which an additive amount of Mg to Zn is more than 20 mol% using a liquid phase film formation method.SOLUTION: A method for manufacturing a semiconductor film comprises: a first step of preparing a mixture containing zinc hydroxide and magnesium hydroxide; a second step of attaching the mixture to a film-formed member; and a third step of heating the film-formed member attached with the mixture from 300°C to 400°C in 100/30 minutes.
申请公布号 JP2014011310(A) 申请公布日期 2014.01.20
申请号 JP20120147030 申请日期 2012.06.29
申请人 TOYOTA MOTOR CORP 发明人 MAEKAWA RYOSUKE;AWANO HIROMOTO;MATSUNAGA TOMOYA;TAKEDA YUICHIRO;SAKAI TAKENOBU;KUSANO YUYA
分类号 H01L21/368;H01L31/06 主分类号 H01L21/368
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